Method for manufacturing a plastic encapsulated semiconductor device and a lead frame therefor

ABSTRACT

A method for manufacturing a plastic encapsulated semiconductor device and a lead frame therefor. An external lead of a lead frame extends to one side of a substrate support serving as a heat sink and supporting a semiconductor substrate, and strips of the lead frame extend to the other end of the substrate support. The external lead and strips are clamped by upper and lower molds for plastic encapsulation so that a thin film of plastic is uniformly formed on a lower surface of the substrate support. A connecting portion between the external lead and a connecting band and the strips extending from a plastic encapsulating housing to the outside are cut.

This is a division of application Ser. No. 352,119, filed Feb. 25, 1982,now U.S. Pat. No. 4,507,675.

BACKGROUND OF THE INVENTION

I. Field of the Invention

The present invention relates to a method for manufacturing a plasticencapsulated semiconductor device which can be used with relativelylarge power and a lead frame therefor.

II. Description of the Prior Art

Plastic encapsulated semiconductor devices are superior to metalencapsulated semiconductor devices in ease of mass production andmanufacturing costs. However, the plastic encapsulated semiconductordevices are inferior to the metal encapsulated semiconductor devices inradiation of heat when they are operated. Plastic encapsulation ofsemiconductor devices has recently been developed. A high powertransistor manufactured by plastic encapsulation has been proposed. Inthis case, sufficient consideration is taken to allow the radiation ofheat.

In a transistor adhered on a metal substrate support and encapsulated byplastic, for example, the lower surface of the substrate support is notcovered with plastic but exposed. The substrate support is mounted on aradiator to radiate heat. However, in this case, the substrate supportmust be electrically insulated from the radiator. The assembly operationof the semiconductor device on the radiator through an insulating plateis complicated and cumbersome.

On the other hand, a plastic encapsulated power transistor is proposedwherein a thin plastic layer is formed on the lower surface of thesubstrate support during plastic encapsulation and an insulating plateis not required for mounting the power transistor on the radiator.However, in this case, at the time of plastic encapsulation, only theside of the lead frame from which extend the external lead is clamped bythe upper and lower molds with a transistor assembly which has theexternal lead on one side. Plastic is injected while the substratesupport is floating in a cavity defined by the molds. Thus, thesubstrate support may be bent in the cavity due to the injectionpressure of the plastic. As a result, it is very difficult toencapsulate in plastic while keeping the substrate support in a properposition, thus, resulting in non-uniformity in the thickness of theplastic layer on the lower surface of the substrate support anddegrading radiation characteristics.

SUMMARY OF THE INVENTION

It is an object of the present invention to provide a method formanufacturing a plastic encapsulated semiconductor device and a leadframe therefore wherein, in manufacturing a plastic encapsulatedsemiconductor device of a structure which has a thin plastic layer onone surface of a substrate support which also serving as a heat sink, tothe other surface of which a semiconductor substrate is adhered, thethickness of the thin plastic layer is uniformly formed and with highprecision.

In order to achieve the above object of the present invention, there isprovided a method for manufacturing a plastic encapsulated semiconductordevice and a lead frame therefor wherein a semiconductor device assemblyis formed, using a lead frame an external lead of which extends to oneside of a substrate support serving as a heat sink and supporting asemiconductor substrate, and strips of which extend to the other end ofthe substrate support; the external lead and strips are clamped by upperand lower molds for plastic encapsulation; and a connecting portionbetween the external lead and a connecting band and the strips extendingfrom a plastic encapsulating housing to the outside are cut. Thus, theplastic layer of a desired thickness is formed and with high precision.

The above and other objects and features of the present invention willbecome apparent from the following detailed description of the preferredembodiments when taken in conjunction with reference to the accompanyingdrawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1 and 2 are sectional views showing the structures of conventionalplastic encapsulated power transistors, respectively;

FIG. 3 is a plan view of a conventional lead frame;

FIG. 4 is a view illustrating the state of plastic encapsulation forforming the plastic encapsulated power transistor of FIG. 2 using thelead frame of FIG. 3;

FIGS. 5A and 5B are a plan view and a sectional view respectively, of alead frame according to one embodiment of the present invention; and

FIGS. 6, 7 and 8 are views illustrating the plastic encapsulationprocess to the completion of manufacture according to a method formanufacturing the plastic encapsulated semiconductor device of thepresent invention.

DETAILED DESCRIPTION OF THE PRIOR ART

FIG. 1 is a sectional view of a conventional power transistor of theplastic encapsulated structure. The lower surface of a substrate support2 on which a transistor element 1 is adhered is not covered with aplastic encapsulating housing 3 but exposed. A through hole 4 is formedfor mounting the power transistor on the radiator with a screw.Reference numeral 5 denotes a protective plastic portion and referencenumeral 6 denotes an external lead. When the plastic encapsulated powertransistor with the above structure is to be mounted on the radiator(not shown), the exposed lower surface of the substrate support 2 mustbe thermally coupled with the radiator but must be electricallyinsulated therefrom. This electrical insulation may be performed byinsertion of an insulating plate such as a mica plate.

With the above structure, the heat radiation effect is guaranteed.However, the insulating plate must be inserted between the radiator andthe substrate support when the substrate support is to be mounted on theradiator, resulting in a complicated packaging operation. Furthermore,the insulating plate must be properly inserted between the radiator andthe substrate support. When the insulating plate, the radiator and thesubstrate support are to be integrally adhered, they may be misaligned.Thus, electrical insulation cannot be guaranteed. Therefore, as shown inFIG. 2, a plastic encapsulated power transistor is proposed wherein athin plastic layer 7 is formed on the lower surface of the substratesupport 2 and the insulating plate is not required.

FIG. 3 is a plan view of a lead frame which is conventionally used forpackaging the plastic encapsulated power transistor of FIGS. 1 and 2.External leads 6, 10 and 11 of the power transistor extend in onedirection from a connecting band 9 on which apertures 8 for determiningthe feed pitch and positioning the substrate support 2 at the time ofplastic encapsulation are formed. As shown in FIG. 3, the substratesupport 2 is connected to the end of the external lead 6. As shown inthe leftmost transistor, the transistor is packaged in such a mannerthat the transistor element 1 is adhered, metal wires 12 are connectedbetween the external leads 10 and 11 and electrodes of the transistorelement 1 corresponding thereto, and a protective plastic portion 5 isformed.

A transistor assembly is obtained, using the lead frame as describedabove. This transistor assembly is formed into a plastic encapsulatedstructure shown in FIG. 2 in the following manner. As shown in FIG. 4,the substrate support 2 of the transistor assembly is floated in acavity formed between an upper mold 13 and a lower mold 14. Plastic 30is then injected into the cavity. The plastic 30 is also filled in thecavity immediately under the lower surface of the substrate support 2.Thus, the plastic encapsulated semiconductor device of FIG. 2 ismanufactured.

As is apparent from FIG. 4, when the plastic encapsulated structure ofFIG. 2 is to be obtained by using the lead frame of FIG. 3, plastic isinjected into the cavity while only the side on which the external leadsare formed is clamped between the upper and lower molds. The substratesupport 2 may be bent within the cavity due to the injection pressure ofplastic. Therefore, it is very difficult to dispose the substratesupport 2 in a proper position. If the substrate support 2 is bent, theuniform thickness of the thin plastic layer 7 is not obtained. Further,this non-uniformity in thickness directly results in degradation ofradiation characteristics.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

FIGS. 5A and 5B are views illustrating the structure of a lead frameaccording to the present invention in which FIG. 5A is a plan viewthereof and FIG. 5B is a sectional view thereof along the line Y--Y.

Two strips 15 and 16 extend from a side of the substrate support 2 whichopposes the side to which the external lead 6 is connected. The strips15 and 16 are connected to a second connecting band 17. Apertures 18formed on the second connecting band 17 serve to fit with part of a moldfor alignment in the plastic encapsulation process. As shown in FIG. 5B,the thickness of the strips 15 and 16 is smaller than that of thesubstrate support 2. A predetermined step is formed between the lowersurfaces of the strips 15 and 16 and the lower surface of the substratesupport 2.

FIG. 6 is a view illustrating the state of plastic encapsulation of thetransistor assembly formed by using the lead frame according to thepresent invention. The plastic 30 is injected into the cavity formedbetween the upper and lower molds 13 and 14 in the same manner as in theconventional plastic encapsulation. However, when the lead frameaccording to the present invention is used, as shown in the figure, theexternal lead 6 of the lead frame is clamped by the upper and lowermolds 13 and 14 on one side. At the same time, the strips 15 and 16 andthe second connecting band 17 are clamped by the upper and lower molds13 and 14 on the other side. Projections (not shown) of the upper mold13 fit in the apertures 8 formed in the first connecting band 9.Simultaneously, projections 19 of the upper mold 13 fit in the aperture18 of the second connecting band 17. Reference numeral 20 denotes aprojection of the upper mold 13 which forms a through hole for mountingthe semiconductor device to a radiator with a screw.

According to the present invention, the substrate support 2 of the leadframe is supported by the external lead 6 and the strips 15 and 16 whichare clamped by the upper and lower molds 13 and 14, and thus floats inthe cavity of the molds. The first and second connecting bands 9 and 17are clamped by the upper and lower molds 13 and 14, as described above.Further, since the projections of the upper mold 13 are fitted in theapertures formed in the first and second connecting bands 9 and 17, thefirst and second bands 9 and 17 are not allowed to move horizontally.Thus, the floating condition of the substrate support 2 is properlycontrolled.

FIG. 7 is a perspective view illustrating the condition after theplastic encapsulation is completed. As shown in the figure, the plasticencapsulating housing has a thin portion 21 in which the through hole 4for a screw is disposed and a thick portion 22. A step is formed betweenthe thin portion 21 and the thick portion 22, so that the head of thescrew does not extend upward when the transistor is mounted to theradiator.

The strips 15 and 16 and the first connecting band 9 are cut along theline X--X and the line X'--X', respectively. Thus, the plasticencapsulated transistor shown in FIG. 8 is manufactured.

In the transistor manufactured according to the method of the presentinvention, the cut surfaces of the strips 15 and 16 are exposed outsidethe plastic encapsulating housing. However, as shown in FIG. 5B, sinceanother step is formed between the lower surface of the substratesupport 2 and the lower surfaces of the strips 15 and 16, an adequatespace is provided between the lower surface of the plastic encapsulatinghousing which is mounted on the radiator and the cut surfaces of thestrips 15 and 16. Therefore, short circuiting does not occur at thisportion. Further, since the strips 15 and 16 are thin, they are easilycut.

The plastic for plastic capsulation used according to the method of thepresent invention preferably has high thermal conductivity. Thethickness of the plastic layer immediately under the substrate supportis preferably 0.3 to 0.5 mm in consideration of heat radiation andelectrical insulation. Within the above range of thickness, betterresults are obtained.

As is apparent from the above description, a plastic encapsulatedsemiconductor device which has a thin plastic layer immediately underthe substrate support which also serves as the heat sink is manufacturedwith high precision according to the present invention.

What is claimed is:
 1. A method for manufacturing a plastic encapsulatedsemiconductor device comprising the steps of clamping at least externalleads and strips of a semiconductor device assembly formed using a leadframe which has a first connecting band connected to said external leadsextending from one side of a substrate support further used as a heatsink and a second connecting band connected to said strips extendingfrom the other side of said substrate support, clamping at least saidexternal leads and said strips by upper and lower molds so that saidsubstrate support may float in a cavity formed by said upper and lowermolds, injecting a plastic into the cavity while parts of said stripsare disposed in said cavity, and cutting parts of said strips whichextend outside a plastic encapsulating housing and cutting a connectingportion between said external leads and said first connecting band.
 2. Amethod according to claim 1, wherein a thickness of the plasticencapsulated below said strips is larger than the thickness of theplastic encapsulated below said substrate support.
 3. A method accordingto claim 1, wherein said cavity formed by said upper and lower moldsconsists of a first portion and a second portion, a distance between atop and a bottom of said first portion being larger than the distance ofthe second portion so as to position a semiconductor element mountingportion of said semiconductor device assembly with said first portion.4. A method according to claim 3, wherein a mold projection for forminga through hole for mounting said semiconductor device to said substratesupport with a screw is formed in said second portion.
 5. A methodaccording to claim 1, wherein a thickness of the plastic encapsulatedunder said substrate support is 0.3 to 0.5 mm.